Advanced Gate Stacks for High-Mobility Semiconductors by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc

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By Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns

This ebook offers a complete monograph on gate stacks in semiconductor expertise. It covers the foremost most recent advancements and fundamentals and should be priceless as a reference paintings for researchers, engineers and graduate scholars alike. The reader gets a transparent view of what has been performed up to now, what's the state of the art and that are the most demanding situations forward earlier than we come any towards a conceivable Ge and III-V MOS expertise.

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Arnold, K. Bandy, M. Belyansky, A. Bonnoit, G. Bronner, V. Chan, X. Chen, Z. Chen, D. Chidambarrao, A. Chou, W. W. Crowder, B. Engel, H. F. Huang, R. F. Jamin, Y. Kohyama, H. W. K. Lee, W. H. Lim, W. Lai, A. Mallikarjunan, K. Matsumoto, A. McKnight, J. Y. Ng, S. Panda, R. Rengarajan, M. Steigerwalt, S. Subbanna, K. Subramanian, J. Sudijono, G. Sudo, S. Sun, B. Tessier, Y. Toyoshima, P. Tran, R. Wise, R. Y. H. Wann, L. T. 1 Strained-Si CMOS Technology 70. 71. 72. 73. 74. 19 Su, M. Horstmann, T. Feudel, A.

A) AFM image and (b) STM image of (110) silicon surface after UPW final rinse at RCA cleaning. The lines like trough to the −110 direction are observed are taken to be 2 and 3, respectively [4] and si is dielectric constant of a silicon. µeff of the p-MOSFET on Si(110) is much larger than that on Si(100) and is also larger than that reported µeff on Si(110) [4,21,22]. This may result from the formation of higher-quality oxides on the Si/SiO2 interface using radical oxidation. However, µeff of the n-MOSFET on Si(110) is the same as that reported previously for Si(110) [4] and less than that for Si(100).

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