By Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns
This ebook offers a complete monograph on gate stacks in semiconductor expertise. It covers the foremost most recent advancements and fundamentals and should be priceless as a reference paintings for researchers, engineers and graduate scholars alike. The reader gets a transparent view of what has been performed up to now, what's the state of the art and that are the most demanding situations forward earlier than we come any towards a conceivable Ge and III-V MOS expertise.
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A) AFM image and (b) STM image of (110) silicon surface after UPW ﬁnal rinse at RCA cleaning. The lines like trough to the −110 direction are observed are taken to be 2 and 3, respectively  and si is dielectric constant of a silicon. µeﬀ of the p-MOSFET on Si(110) is much larger than that on Si(100) and is also larger than that reported µeﬀ on Si(110) [4,21,22]. This may result from the formation of higher-quality oxides on the Si/SiO2 interface using radical oxidation. However, µeﬀ of the n-MOSFET on Si(110) is the same as that reported previously for Si(110)  and less than that for Si(100).